BPW34B Datasheet (Siemens Semiconductor Group)

BPW34B, Silicon PIN Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Sym

Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 1.8 1.4 3.5 3.0 0.6 0.4 2.2 1.9 Approx.

weight 0.1 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeig

BPW34B Features

* q Especially suitable for applications from 350 nm to 1100 nm q Short switching time (typ. 25 ns) q DIL plastic package with high packing density q SMT version on request Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb im sichtbaren Lic