BFQ82 Datasheet - Siemens Semiconductor Group

BFQ82 NPN Silicon RF Transistor

NPN Silicon RF Transistor q q q q BFQ 82 For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA. Hermetically sealed ceramic package. fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 82 Marking 82 Ordering Code (tape and reel) Q62702-F1189 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltag.

BFQ82 Features

* .076 0.084 0.088 0.092 0.101 0.108 0.132 0.156 60.6 51.4 45.5 41.6 39.1 36.6 35.8 36.1 36.8 37.4 38.4 39.2 40.8 41.9 42.5 42.6 42.6 42.2 41.4 37.4 0.822 0.705 0.604 0.525 0.462 0.376 0.319 0.283 0.256 0.237 0.222 0.209 0.191 0.182 0.181 0.180 0.181 0.179 0.188 0.215

* 32.5

* 43.2

BFQ82 Datasheet (400.64 KB)