BFG235 Datasheet - Siemens Semiconductor Group

BFG235 NPN Silicon RF Transistor

BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 235 BFG235 Q62702-F1432 1=E 2=B 3=E 4=C Package SOT-223 Max.

BFG235 Datasheet (48.73 KB)