Datasheet Details
- Part number
- LPT16ED
- Manufacturer
- SiGe Semiconductor Inc.
- File Size
- 333.17 KB
- Datasheet
- LPT16ED_SiGeSemiconductorInc..pdf
- Description
- 30 GHz SiGe Bipolar Transistor Final
LPT16ED Description
LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators Point-to-point ra.
The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.
LPT16ED Features
* Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment)
Ordering Information
Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack
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