LH28F160S3HNS-TR - Flash Memory 16M (2Mb x 8 / 1Mb x 16)

Sharp Microelectronics

Datasheet Details

Part number	LH28F160S3HNS-TR
Manufacturer	Sharp Microelectronics
File Size	789.54 KB
Description	Flash Memory 16M (2Mb x 8 / 1Mb x 16)
Datasheet	LH28F160S3HNS-TR_SharpMicroelectronics.pdf

Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions.
Extended Cycling Capability 100,000 Block Erase Cycles 3.2 Million Block Erase Cycles/Chip.
Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode.
Automated Write and Erase Command User Interface Status Register.
Industry-Standard Packaging 56-Lead SSOP.
ETOXTM.
V Nonvolatile Flash Technology.
CMOS Process (P-type si.

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Published: Jun 17, 2010 |