LH5PV8512 Datasheet (Sharp Electrionic Components) - CMOS 4M (512K x 8) Pseudo-Static RAM

LH5PV8512, CMOS 4M (512K x 8) Pseudo-Static RAM

The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization.

It is fabricated using silicon-gate CMOS process technology.

A PSRAM uses on-chip refresh circuitry with a DRAM memory cell for pseudo-static operation which eliminates external clock inputs, while having the same

LH5PV8512 Features

* 524,288 words × 8 bit organization

* CE access time (tCEA): 120 ns (MAX.)

* Cycle time (tRC): 190 ns (MIN.)

* Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention)

* Power consumption (MAX.): 126 mW (Operating) 95 µW (Standby = CMOS in