LH28F320S3TD-L10 - 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

Sharp Electrionic Components

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Datasheet Details

Part number	LH28F320S3TD-L10
Manufacturer	Sharp Electrionic Components
File Size	291.40 KB
Description	32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
Datasheet	LH28F320S3TD-L10_SharpElectrionicComponents.pdf

LH28F320S3TD-L10 Product details

Description

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.

Features

Absolute protection with VPP = GND.
Flexible block locking.
Erase/write lockout during power transitions.
SRAM-compatible write interface.
User-configurable x8 or x16 operation.
High-density symmetrically-blocked architecture.
Sixty-four 64 k-byte erasable blocks.
Enhanced cycling capability.
100 000 block erase cycles.
3.2 million block erase cycles/bank.
Low power management.
Deep power.

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Published: Mar 22, 2005 |