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SMC8810W - Common-Drain Dual N-Channel MOSFET

SMC8810W Description

SMC8810W Common-Drain Dual N-Channel MOSFET *.
SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

SMC8810W Features

* VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ. )@VGS=4.5V RDS(ON)=14.5mΩ(Typ. )@VGS=4.0V RDS(ON)=15.5mΩ(Typ. )@VGS=3.2V RDS(ON)=17.8mΩ(Typ. )@VGS=2.5V RDS(ON)=24.5mΩ(Typ. )@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and Maximum DC current capability

SMC8810W Applications

* low in-line power loss are needed in small outline surface mount package.
* PART NUMBER INFORMATION SMC 8810 W - TR G a b c de a : Company name. b : Product Serial number. c : Package code W:TSSOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant

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Datasheet Details

Part number
SMC8810W
Manufacturer
Semtron
File Size
329.17 KB
Datasheet
SMC8810W-Semtron.pdf
Description
Common-Drain Dual N-Channel MOSFET

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Common-Drain Dual N-Channel MOSFET Semtron
Semtron SMC8810W-like datasheet