SMC2868ESD Datasheet (Semtron) - Single N-Channel MOSFET

SMC2868ESD, Single N-Channel MOSFET

SMC2868ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package.

SMC2868ESD Features

* VDS=20V, ID=0.9A RDS(ON)=200mΩ(Typ.)@VGS=4.5V RDS(ON)=245mΩ(Typ.)@VGS=2.5V RDS(ON)=310mΩ(Typ.)@VGS=1.8V RDS(ON)=380mΩ(Typ.)@VGS=1.5V RDS(ON)=680mΩ(Typ.)@VGS=1.2V

* High-speed switching, Low On-resistance

* 1.2V Low gate drive

* ESD protected

* APPLICATIONS

* Hend-Held Instruments