SKiiP703GD121-3DUW Datasheet (Semikron)

SKiiP703GD121-3DUW, IGBT POWER MODULE

SKiiP 703GD121-3DUW I.

Power section 1 SKiiP703GB121CT per phase Absolute maximum ratings Symbol Conditions 1) Values IGBT and inverse diode VCES VCC Operating DC link voltage VGES IC IGBT, Theat sink = 25 / 70 °C ICM IGBT, tp < 1 ms,Theat sink = 25°C IF Diode, Theat sink = 25 / 70 °C IFM Diode, tp < 1 ms IFSM Diode, Tj = 150 °C, 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms Tj , (Tstg) Visol AC, 1min.

IC-package4) Theat sink = 70°C, Tterm = 115 °C 1200 900 ± 20 700 / 525 1400 525 /

SKiiP703GD121-3DUW Features

* SKiiP technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution