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SEMiX603GAL066HDs IGBT

SEMiX603GAL066HDs Description

SEMiX603GAL066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GAL066HDs .

SEMiX603GAL066HDs Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

SEMiX603GAL066HDs Applications

* br>
* Matrix Converter
* Resonant Inverter
* Current Source Inverter Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C
* For short circuit: Soft RGoff recommended
* Take care of over-volta

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