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SEMiX151GD12E4s IGBT

SEMiX151GD12E4s Description

SEMiX151GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX151GD12E4s .

SEMiX151GD12E4s Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMiX151GD12E4s Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 8

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Datasheet Details

Part number
SEMiX151GD12E4s
Manufacturer
Semikron
File Size
526.99 KB
Datasheet
SEMiX151GD12E4s-Semikron.pdf
Description
IGBT

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