SKiM429GD17E4HD Datasheet (Semikron International)

SKiM429GD17E4HD, IGBT

SKiM429GD17E4HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1700 595 479 420 1260 -20 20 10 -40 175 413 298 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 3699 -40 150 700 -40 125 AC sinus 50 Hz, t = 1 min 3300 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SKiM® 93 Trench IGBT Modules SKiM429GD17E4HD Tj

SKiM429GD17E4HD Features

* IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate

* Pressure contact technology for thermal contacts and electrical contacts

* High short circuit capability, self limiting to 6 x IC