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2N3996 - Silicon NPN Transistor

Description

SEMICOA Corporation offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3996J) JANTX level (2N3996JX) JANTXV level (2N3996JV) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANT

Features

  • Hermetically sealed TO-x metal can.
  • Also available in chip configuration.
  • Chip geometry 9201.
  • Reference document: MIL-PRF-19500/374 Benefits.
  • Qualification Levels: JAN, JANTX, and JANTXV.
  • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation.

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Datasheet Details

Part number 2N3996
Manufacturer Semicoa Semiconductor
File Size 338.26 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N3996 Datasheet

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Full PDF Text Transcription

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Description SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3996J) • JANTX level (2N3996JX) • JANTXV level (2N3996JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Please contact SEMICOA for special configurations www.SEMICOA.
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