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SM12N60S
600V N-Channel MOSFET
TO-220F
SM12N60S
KONGSON Features:
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 42nC (Typ.) □ BVDSS=600V,ID=12A □ RDS(on) :0.60 Ω (Max) @VG=10V
□ 100% Avalanche Tested
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol VDSS
ID
VGS(TH) EAS IAR PD Tj Tstg TL
Parameter
Drain-Source Voltage Drain Current Gate Threshold Voltage
Tj=25℃ Tj=100℃
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2) Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
Value 600 12 7.
SM12N60S Datasheet
