HRS80N08K - N-Channel MOSFET

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Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 60nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 6.7 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested November 2014 BVDSS = 80 V RDS(on) typ Pȍ ID = 120 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Dr.

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Published: Apr 13, 2017 |