HRP45N06K - N-Channel Trench MOSFET

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Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 120 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 3.7 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 3.7mΩ ID = 150 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Curren.

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Published: Dec 22, 2016 |