HRLP80N06K - N-Channel Trench MOSFET

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Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 100 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.3 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested Sep 2015 BVDSS = 60 V RDS(on) typ = 6.3mΩ ID = 80 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source.

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Published: Jul 18, 2016 |