HRLP55N03K - N-Channel MOSFET

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Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.2 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 7.5 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 30 V RDS(on) typ = 4.2mΩ ID = 100 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-So.

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Published: Mar 26, 2016 |