HFW50N06 - 60V N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Published: Jun 7, 2015 |