HFT1N60S N-Channel MOSFET

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Description

HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A .

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Datasheet Specifications

Part number: HFT1N60S
Manufacturer: SemiHow
File Size: 305.01 KB
Datasheet: HFT1N60S-SemiHow.pdf
Description: N-Channel MOSFET

Features

* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Teste

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HFT1N60S N-Channel MOSFET SemiHow

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