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HFS830 - N-Channel MOSFET

HFS830 Description

HFS830 Dec 2005 HFS830 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 4.5 A .

HFS830 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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Datasheet Details

Part number
HFS830
Manufacturer
SemiHow
File Size
794.14 KB
Datasheet
HFS830-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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