HFS7N80 - 800V N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG.

📁 HFS7N80 Similar Datasheet

Other Datasheets by SemiHow

Published: Nov 1, 2014 |