Datasheet Specifications
- Part number
- HFI9N50
- Manufacturer
- SemiHow
- File Size
- 0.96 MB
- Datasheet
- HFI9N50-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.58 Ω (Typ. ) @VGS=10V 100% Avalanche TestHFI9N50 Distributors
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