HFI640 200V N-Channel MOSFET

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Description

HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A .

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Datasheet Specifications

Part number: HFI640
Manufacturer: SemiHow
File Size: 709.39 KB
Datasheet: HFI640-SemiHow.pdf
Description: 200V N-Channel MOSFET

Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ. ) @VGS=10V  100% Avalanche Tes

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HFI640 200V N-Channel MOSFET SemiHow

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