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HFD630 - N-Channel MOSFET

SemiHow

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Datasheet Details

Part number	HFD630
Manufacturer	SemiHow
File Size	162.20 KB
Description	N-Channel MOSFET
Datasheet	HFD630-SemiHow.pdf

HFD630 Product details

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-S.

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Published: Apr 18, 2016 |