Datasheet Specifications
- Part number
- HFD3N80
- Manufacturer
- SemiHow
- File Size
- 1.14 MB
- Datasheet
- HFD3N80-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche TesteHFD3N80 Distributors
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