Datasheet Specifications
- Part number
- HFC1N80
- Manufacturer
- SemiHow
- File Size
- 201.12 KB
- Datasheet
- HFC1N80-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFC1N80 Jan 2007 HFC1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 0.6 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TesteHFC1N80 Distributors
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