Datasheet Specifications
- Part number
- HFA11N90
- Manufacturer
- SemiHow
- File Size
- 195.72 KB
- Datasheet
- HFA11N90-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFA11N90 March 2014 HFA11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 11 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFA11N90 Distributors
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