HCU7N70S - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7S#9GS=10V 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS D.

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Published: Apr 14, 2017 |