HCS65R600T - N-Channel MOSFET

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Datasheet Details

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 7.5 0.6 14 Unit V A ȍ nC.

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Published: Apr 14, 2017 |