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HCP65R360S - 650V N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 23 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Datasheet Details

Part number HCP65R360S
Manufacturer SemiHow
File Size 175.02 KB
Description 650V N-Channel Super Junction MOSFET
Datasheet download datasheet HCP65R360S Datasheet

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Full PDF Text Transcription

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HCP65R360S HCP65R360S 650V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 23 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3.
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