HCA60R099F - 600V N-Channel Super Junction MOSFET

Datasheet Summary

Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode.
Fast Recovery Time.

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Datasheet Details

Part number	HCA60R099F
Manufacturer	SemiHow
File Size	295.56 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCA60R099F Datasheet
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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode • Fast Recovery Time Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 30.

Published: Nov 4, 2024 |