ZVN2106B - N-CHANNEL ENHANCEMENT MODE MOSFET

Seme LAB

The ZVN2106B by Seme LAB is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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ZVN2106B N-CHANNEL ENHANCEMENT MODE MOSFET by Seme LAB - Datasheet Preview — Official preview page of the **ZVN2106B** N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (Seme LAB).

Datasheet Details

Part number	ZVN2106B
Manufacturer	Seme LAB
File Size	119.10 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	ZVN2106B_SemeLAB.pdf
Additional preview pages of the ZVN2106B datasheet.

ZVN2106B Product details

Description

45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 SOURCE PIN 3 DRAIN CASE DRAIN PIN 2 GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.High Reliability Screening options are available.CASE ABSOLUTE MAXIMUM RATINGS T VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg

Features

2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3.
Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain.

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Published: Sep 19, 2013 |