BUL65B - NPN Transistor

Seme LAB

Datasheet Details

Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK (TO251) Pin 1.
Base Pad 2.
Collector Pad 3.
Emitter.

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Published: Mar 23, 2005 |