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BDY90 - NPN SILICON TRANSISTOR

BDY90 Description

BDY90 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max.MECHANICAL DATA D.

BDY90 Features

* V(BR)CEO = 100V (Min)
* Hermetically Sealed TO3 Metal Package

BDY90 Applications

* Linear & Switching Applications 1 = Base TO3 (TO-204AA) 2 = Emitter Case = Collector ABSOLUTE MAXIMUM RATINGS ( Tc = 25°C unless otherwise stated) VCEO Collector - Emitter Voltage 100V VCEV Collector - Emitter Voltage (VBE = -1.5V) 120V VCBO Collector - Base Voltage 120V VEBO Emi

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Datasheet Details

Part number
BDY90
Manufacturer
Seme LAB
File Size
89.82 KB
Datasheet
BDY90-SemeLAB.pdf
Description
NPN SILICON TRANSISTOR

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NPN SILICON TRANSISTOR Seme LAB
Seme LAB BDY90-like datasheet