SST2625 Datasheet (SeCoS) - P-Channel MOSFET

SST2625, P-Channel MOSFET

0.37Ref.

0.20 0.60 Ref.

2.60 3.00 The SST2625 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The SST2625 is universally used for all commercial-industrial applications.

0.30 0.55 0.95 Ref.

2.70 3.10 0~0.1 0.25

SST2625 Features

* Low On-Resistance

* Low Gate Charge D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 G1 G2 Date Code 2625 S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current