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SSL6679 - P-Channel Enhancement Mode Power Mos.FET

Description

The SSL6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Lower On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol.

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Datasheet Details

Part number SSL6679
Manufacturer SeCoS
File Size 730.53 KB
Description P-Channel Enhancement Mode Power Mos.FET
Datasheet download datasheet SSL6679 Datasheet

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Full PDF Text Transcription

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SSL6679 Elektronische Bauelemente -75A, -30V,RDS(ON) 9m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSL6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit. Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristics D REF. A b L4 c L3 L1 E G S Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.00 0.30 0.36 0.5 1.50 REF. 2.29 2.79 9.80 10.4 REF. c2 b2 D e L θ L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 o o 0 8 1.
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