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SPT258N10SV-C - N-Channel Shielded Gate Trench Power MOSFET

Datasheet Summary

Features

Shielded Gate Trench Technology.
High Speed Power Smooth Switching.
Enhanced Body diode dv/dt capability.
100% UIS Tested, 100% Rg Tested.
Super Low Gate Charge.
Green Device Available TOLL-8.

SeCoS

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SPT258N10SV-C N-Channel Shielded Gate Trench Power MOSFET by SeCoS - Datasheet Preview — Datasheet preview – SPT258N10SV-C

Datasheet Details

Part number	SPT258N10SV-C
Manufacturer	SeCoS
File Size	603.37 KB
Description	N-Channel Shielded Gate Trench Power MOSFET
Datasheet	SPT258N10SV-C Datasheet
Additional preview pages of the SPT258N10SV-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.

Published: May 27, 2024 |