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SPRD4160-C Dual N-Ch Enhancement Mode Power MOSFET

SPRD4160-C Description

Elektronische Bauelemente SPRD4160-C 42A, 60V, RDS(ON) 12mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie.
The SPRD4160-C is the highest performance trench Dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

SPRD4160-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4160 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 1.1

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Datasheet Details

Part number
SPRD4160-C
Manufacturer
SeCoS
File Size
540.80 KB
Datasheet
SPRD4160-C-SeCoS.pdf
Description
Dual N-Ch Enhancement Mode Power MOSFET

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📌 All Tags

Dual N-Ch Enhancement Mode Power MOSFET SeCoS
SeCoS SPRD4160-C-like datasheet