SID05N60J Datasheet (SeCoS) - N-Channel MOSFET

SID05N60J, N-Channel MOSFET

This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently.

This new device also offers a drain-to-source diode fast recovery time.

Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, pow

SID05N60J Features

* Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse A