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SGM0410 - N-Channel Enhancement Mode Power MOSFET

Description

The SGM0410 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The SGM0410 meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SGM0410
Manufacturer SeCoS
File Size 316.02 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SGM0410 Datasheet

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Full PDF Text Transcription

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Elektronische Bauelemente SGM0410 3.5A, 100V, RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SGM0410 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SGM0410 meet the RoHS and Green Product requirement with full function reliability approved.
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