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BC857S - PNP Silicon Multi-Chip Transistor

BC857S Description

Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * .

BC857S Features

* Power dissipation PCM : 0.3 W (Tamp. = 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150 CO C 1 B2 E2 .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.

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Datasheet Details

Part number
BC857S
Manufacturer
SeCoS
File Size
348.31 KB
Datasheet
BC857S-SeCoS.pdf
Description
PNP Silicon Multi-Chip Transistor

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PNP Silicon Multi-Chip Transistor SeCoS
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