SSE4N60 Datasheet (SeCoS Halbleitertechnologie) - N-Channel Enhancement Mode Power MOSFET

SSE4N60, N-Channel Enhancement Mode Power MOSFET

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is well suit

SSE4N60 Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Millimeter Min. Max. 10.6 1.58 1.82 1.20 1.45 14.22