SDG5521C - N and P-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie

SDG5521C Datasheet Preview — Preview of SDG5521C PDF

Datasheet Details

Part number	SDG5521C
Manufacturer	SeCoS Halbleitertechnologie
File Size	93.46 KB
Description	N and P-Ch Enhancement Mode Power MOSFET
Datasheet	SDG5521C-SeCoSHalbleitertechnologie.pdf

SDG5521C Product details

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. 3

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2.
3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E.

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Published: Aug 11, 2014 |