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STT2602 - N-Channel Enhancement Mode Power MosFET

Description

The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The STT2602 is universally used for all commercial-industrial applications.

Features

  • Low On-Resistance.
  • Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings www. DataSheet4U. com Parameter Symbol VDS VGS Ratings 20 ± 12 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,.

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Datasheet Details

Part number STT2602
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 610.21 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet STT2602 Datasheet

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Full PDF Text Transcription

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STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2602 is universally used for all commercial-industrial applications. Features * Low On-Resistance * Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings www.DataSheet4U.
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