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2SB1106 - SILICON POWER TRANSISTOR

Description

With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBO

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Datasheet Details

Part number 2SB1106
Manufacturer SavantIC
File Size 124.37 KB
Description SILICON POWER TRANSISTOR
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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.
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