The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN7008
MCH3308
P-Channel Silicon MOSFET
MCH3308
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2167A
[MCH3308]
0.25
0.3 0.15
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
3
2.1 1.6
0.25
0.65 2.0
0.07
2
1
3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.85
1 : Gate 2 : Source 3 : Drain
2
1
SANYO : MCPH3
Ratings --30 ± 20 --1 --4 0.
MCH3308 Datasheet
