LC35W1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Sanyo

Datasheet Details

Part number	LC35W1000BM
Manufacturer	Sanyo
File Size	165.88 KB
Description	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Datasheet	LC35W1000BM_SanyoSemiconDevice.pdf

Low-voltage operation: 2.7 to 3.6 V.
Wide operating temperature range:.
40 to +85°C.
Access time: 70 ns (maximum): LC35W1000BM and LC35W1000BTS-70U. 100 ns (maximum): LC35W1000BM and LC35W1000BTS-10U.
Low current drain Standby mode: 0.1 µA (typical.
) at Ta = +25°C 10.0 µA (maximum) at Ta =.
40 to +70°C 20.0 µA (maximum) at Ta =.
40 to +85°C.
Data retention voltage: 2.0 to 3.6 V.
No clock required (fully static ci.

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Published: Apr 25, 2005 |