LC35V1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Sanyo

Datasheet Details

Part number	LC35V1000BM
Manufacturer	Sanyo
File Size	178.33 KB
Description	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Datasheet	LC35V1000BM_SanyoSemiconDevice.pdf

Low-voltage operation: 3.0 to 3.6 V.
Wide operating temperature range:.
40 to +85°C.
Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.
Low current drain Standby mode: 0.05 µA (typical.
) at Ta = +25°C.
: When VCC = 3.0 V 10.0 µA (maximum) at Ta = +70°C 20.0 µA (maximum) at Ta = +85°C.
Data retention voltage: 2.0 to 3.6 V.
No clock required (fully static circuits).
Input/output shared function pins, 3-st.

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Published: Apr 25, 2005 |